型号 功能描述 生产厂家&企业 LOGO 操作
HGTG24N60D1

24A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

HGTG24N60D1产品属性

  • 类型

    描述

  • 型号

    HGTG24N60D1

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-8-15 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIR
24+
NA/
3302
原装现货,当天可交货,原型号开票
INTERSIL
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
HARRIS
24+
8000
原装现货,特价销售
INTESIL
23+
TO-3P
2000
专做原装正品,假一罚百!
FAIRCHILD/仙童
23+
TO-247
110500
原厂授权一级代理,专业海外优势订货,价格优势、品种
Intersil
24+
TO-247
8866
FAIRCHILD
23+
TO-247
9526
INTERSIL
17+
TO-3P
6200
HARRIS
2020+
N/A
47
百分百原装正品 真实公司现货库存 本公司只做原装 可
HARRIS
23+
N/A
8650
受权代理!全新原装现货特价热卖!

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