45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 45A 164W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

40A, 600V, Rugged UFS Series N-Channel IGBTs

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45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately