位置：首页 > IC中文资料第1835页 > HGTD3N60C3S9A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTD3N60C3S9A | 6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Fairchild 仙童半导体 |   | |
HGTD3N60C3S9A | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 6A 33W TO252AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |
HGTD3N60C3S9A产品属性
- 类型
描述
- 型号
HGTD3N60C3S9A
- 功能描述
IGBT 晶体管 6a 600V N-Ch IGBT UFS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INTERSIL |
18+ |
SOT-252 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTERSIL |
00+ |
TO252 |
27361 |
原装现货支持BOM配单服务 |
|||
Fairchild/ON |
22+ |
TO252AA |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHIL |
24+ |
TO-252 |
8866 |
||||
FAIRCHILD |
23+ |
SOT-252 |
5000 |
专注配单,只做原装进口现货 |
|||
Fairchild/ON |
23+ |
TO252AA |
7000 |
||||
FAIRCHILD/仙童 |
23+ |
67780 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
温度开关 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
FAIRC |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
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HGTD3N60C3S9A规格书下载地址
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HGTD3N60C3S9A数据表相关新闻
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DdatasheetPDF页码索引
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