位置：首页 > IC中文资料第6736页 > HCT80
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) | TTELEC |   | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) | TTELEC | | ||
Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) | TTELEC | | ||
Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) | TTELEC | | ||
Dual En hance ment Mode MOSFET Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on | OPTEK | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
Dual En hance ment Mode MOSFET Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on | OPTEK | | ||
Dual En hance ment Mode MOSFET Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on | OPTEK | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
HCT8 Series High Clearance and Creepage Transformer Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab | BOURNS 伯恩斯 | | ||
Dual enhancement mode MOSFET | TTELEC | | ||
Dual enhancement mode MOSFET | TTELEC | |
HCT80产品属性
- 类型
描述
- 型号
HCT80
- 功能描述
Optoelectronic
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNS |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
恩XP |
2016+ |
TSSOP14 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TT Electronics/Optek Technolog |
22+ |
6SMD |
9000 |
原厂渠道,现货配单 |
|||
ISND |
2020 |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
PHI |
26+ |
TQFP32 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
TI/德州仪器 |
2450+ |
SOP14 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HIT |
96+ |
SSOP14 |
50 |
原装现货海量库存欢迎咨询 |
|||
HEC |
24+ |
A |
4000 |
||||
HARRIS |
2025+ |
SOP16 |
3365 |
全新原厂原装产品、公司现货销售 |
|||
PHI |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
HCT80规格书下载地址
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HCT80数据表相关新闻
HCSD-13-S-16.00-01-N-G只做原装货
HCSD-13-S-16.00-01-N-G只做原装货
2024-8-30HCPL-M601-500E
HCPL-M601-500E
2023-10-18HD3SS3220IRNHT
公司原装正品 现货库存 价格优势
2022-4-21HD3SS3212IRKSR
www.hfxcom.com
2022-2-23HC-SR04
HC-SR04
2021-1-14HD06-9N PANJIT/强茂 SOP4
HD06-9N PANJIT/强茂 SOP4
2020-11-14
DdatasheetPDF页码索引
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