Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead