Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Description The Intersil HCS166MS is an 8-bit shift register that has fully synchronous serial or parallel data entry selected by an active LOW Parallel Enable (PE) input. When the PE is LOW one setup time before the LOW-to-HIGH clock transition, parallel data is entered into the register. When P

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD s(Si)/s 20ns Pulse • La

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD s(Si)/s 20ns Pulse • La

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Description The Intersil HCS166MS is an 8-bit shift register that has fully synchronous serial or parallel data entry selected by an active LOW Parallel Enable (PE) input. When the PE is LOW one setup time before the LOW-to-HIGH clock transition, parallel data is entered into the register. When P

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)