Radiation Hardened 8-Input Multiplexer

Description The Intersil HCS151MS is a Radiation Hardened 8-Input Multiplexer having three binary control inputs (S0, S1, S2) and an active low enable (E) input. The three binary signals select one of eight channels. Outputs are both inverting and non-inverting. The HCS151MS utilizes advanced CM

Radiation Hardened 8-Input Multiplexer

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

CMOS 8-Input Multiplexer

The Intersil HCS151MS is a Radiation Hardened 8-Input Multiplexer having three binary control inputs (S0, S1, S2) and an active low enable (\"E) input. The three binary signals select one of eight channels. Outputs are both inverting and non-inverting.\nThe HCS151MS utilizes advanced CMOS/SOS techno • 3 Micron Radiation Hardened SOS CMOS \n• Total Dose 200K RAD (Si) \n• SEP Effective LET No Upsets: >100 MEV-cm2/mg \n• Single Event Upset (SEU) Immunity -9 Errors/ Bit-Day (Typ) \n• Dose Rate Survivability: >1 x 1012 RAD (Si)/s \n• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse \n• Cosmic Ray Upset I;

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The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

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GaAs Infrared Light Emitting Diodes

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