P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

Features • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM

Low Voltage MOSFET

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages