500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

2Gb (32Mx8Banks×8) DDR2 SDRAM

The H2A302G0856B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 2G bits which organized as 32Mbits x 8 banks by 8 bits.\nThis synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DD \n• All inputs and outputs are compatible with SSTL_18 interface. \n• EightBanks \n• Bust length: 4 and 8. \n• Programmable Additive Latency (AL):0, 1, 2, 3, 4, 5 \n• Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL) \n• Data inputs on DQS centers when write. \n• On chip DLL ;

128Mb (2Mx4Banks×16) DDR2 SDRAM

The H2A31281656B is a 128M bits DDR2 SDRAM, organized as 2,097,152words x 4 banks x 16 bits. The -25 grade parts are compliant to the DDR2 800 (6-6-6) specification . The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.\nJEDEC specifications require the refresh rate to double when \n• Power Supply: VDD, VDDQ = 1.8 V ± 0.1V \n• Double Data Rate architecture: two data transfers per clock cycle \n• Burst Length: 4 and 8 \n• Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data \n• Edge-aligned with Read data and center-aligned with Write d;

512Mb (8Mx4Banks×16) DDR2 SDRAM

The H2A35121656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec \n• All inputs and outputs are compatible with SSTL_18 interface. \n• Four Banks \n• Bust length: 4 and 8.  Programmable CAS Latency (CL): 3, 4, 5, 6 & 7. \n• Write Latency (WL) =Read Latency (RL) -1. \n• Bi-directional Differential Data Strobe (DQS). \n• Data outputs on DQS, /DQS edges when read.;

High Power single chip LED

文件：289.45 Kbytes Page：4 Pages

High Power single chip LED

文件：289.36 Kbytes Page：4 Pages

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURE

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

文件：56.36 Kbytes Page：7 Pages

Schottky Barrier Diodes

文件：75.27 Kbytes Page：2 Pages