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HZS2A3

SILICON EPITAXIAL PLANER ZENER DIODES

SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

SEMTECH_ELEC

先之科半导体

HZS2A3

Zener Diodes

分立

EIC

HZS2A3

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

文件:56.36 Kbytes Page:7 Pages

RENESAS

瑞萨

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURE

NEC

瑞萨

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

RENESAS

瑞萨

Schottky Barrier Diodes

文件:75.27 Kbytes Page:2 Pages

SANKEN

三垦

HZS2A3产品属性

  • 类型

    描述

  • VZ@IZT(V):

    1.9

  • IZT(mA):

    5

  • IR@VR(µA):

    25

  • IR@VR(V):

    0.5

更新时间:2026-7-23 16:09:00
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