Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Planar Zener Diode for Stabilized Power Supply

FEATURES Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provides flexible application.

SILICON EPITAXIAL PLANER ZENER DIODES

for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diodes

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稳压二极管

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURE

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

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