型号 功能描述 生产厂家 企业 LOGO 操作

1350V /30A Trench Field Stop IGBT

FEATURES  High breakdown voltage to 1350V for improved reliability  Trench-Stop Technology offering :  Very tight parameter distribution  High ruggedness, temperature stable  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche c

LUGUANG

鲁光电子

N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT

Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high sw

STMICROELECTRONICS

意法半导体

N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT

Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high sw

STMICROELECTRONICS

意法半导体

30 A - 600 V - short circuit rugged IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10

STMICROELECTRONICS

意法半导体

30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

STMICROELECTRONICS

意法半导体

30 A - 1200 V - short circuit rugged IGBT

文件:359.23 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

STMICROELECTRONICS

意法半导体

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件:159.35 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT

文件:305.6 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT

STMICROELECTRONICS

意法半导体

30 A - 600 V - short circuit rugged IGBT

STMICROELECTRONICS

意法半导体

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件:411.41 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT

文件:306.18 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件:1.91768 Mbytes Page:22 Pages

STMICROELECTRONICS

意法半导体

GW30产品属性

  • 类型

    描述

  • 型号

    GW30

  • 制造商

    Ferraz Shawmut

更新时间:2025-12-26 11:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
QWAVE
QFN8
125000
一级代理原装正品,价格优势,长期供应!
ST/意法
24+
NA/
1595
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法
23+
TO220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
23+
SOT23-6
27035
##公司主营品牌长期供应100%原装现货可含税提供技术
ST
1215+
TO-247
150000
全新原装,绝对正品,公司大量现货供应.
ST/意法
2023+
TO-3P
6895
原厂全新正品旗舰店优势现货
ST/意法
18+
TO-3P
880000
明嘉莱只做原装正品现货
英飞凌
23+
TO-3P
7300
专注配单,只做原装进口现货
ST/意法
23+
TO-247
50000
全新原装正品现货,支持订货
ST/意法
2223+
TO-3P
26800
只做原装正品假一赔十为客户做到零风险

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