Description

This IGBT utilizes the advanced Power MESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Features

■ High frequency operation

■ Lower CRES / CIES ratio (no cross-conduction

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

Applications

■ High frequency motor controls, inverters, UPS

■ HF, SMPS and PFC in both hard switch and

resonant topologies