型号 功能描述 生产厂家 企业 LOGO 操作

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Infineon

英飞凌

64K x 18 Synchronous Burst RAM Pipelined Output

Infineon

英飞凌

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

RENESAS

瑞萨

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

RENESAS

瑞萨

30 W BTL audio power amplifier

The AN7164 is an integrated circuit designed for 30 W (VCC =21 V, 8 Ω) output power amplifier. High power output (BTL 30 W), low distortion and low noise are re alized. High reliability is obtained due to various kinds of protectors built in. Furthermore, on-off of output is possible from stand

Panasonic

松下

Inverse DIN 41612 Boardmount Socket

文件:33.27 Kbytes Page:2 Pages

3M

INSTRUMENTATION HANDLES

文件:86.3 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

GVT7164产品属性

  • 类型

    描述

  • 型号

    GVT7164

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    64K X 18 Synchronous Burst SRAM

更新时间:2025-12-31 12:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GALVANTECH
23+
PLCC52
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
GALVANTECH
2450+
QFP
8850
只做原装正品假一赔十为客户做到零风险!!
GVT
22+
PLCC
12245
现货,原厂原装假一罚十!
2023+
3000
进口原装现货
2023+
5800
进口原装,现货热卖
GALVANTECH
24+
QFP
6110
GALVANTECH
23+
PLCC52
7000
绝对全新原装!100%保质量特价!请放心订购!
25+
O-NEWQ
541
百分百原装正品 真实公司现货库存 本公司只做原装 可
GALVANTECH
68500
一级代理 原装正品假一罚十价格优势长期供货
GALVANTECH
22+
PLCC52
20000
公司只做原装 品质保障

GVT7164数据表相关新闻