位置:首页 > IC中文资料第9509页 > GVT7164
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64K X 18 Synchronous Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K X 18 Synchronous Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K X 18 Synchronous Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K X 18 Synchronous Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
64K X 18 Synchronous Burst SRAM | Infineon 英飞凌 | |||
64K x 18 Synchronous Burst RAM Pipelined Output | Infineon 英飞凌 | |||
CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p | RENESAS 瑞萨 | |||
CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p | RENESAS 瑞萨 | |||
30 W BTL audio power amplifier The AN7164 is an integrated circuit designed for 30 W (VCC =21 V, 8 Ω) output power amplifier. High power output (BTL 30 W), low distortion and low noise are re alized. High reliability is obtained due to various kinds of protectors built in. Furthermore, on-off of output is possible from stand | Panasonic 松下 | |||
Inverse DIN 41612 Boardmount Socket 文件:33.27 Kbytes Page:2 Pages | 3M | |||
INSTRUMENTATION HANDLES 文件:86.3 Kbytes Page:1 Pages | KEYSTONE Keystone Electronics Corp. |
GVT7164产品属性
- 类型
描述
- 型号
GVT7164
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
64K X 18 Synchronous Burst SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GALVANTECH |
23+ |
PLCC52 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
GALVANTECH |
2450+ |
QFP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
GVT |
22+ |
PLCC |
12245 |
现货,原厂原装假一罚十! |
|||
2023+ |
3000 |
进口原装现货 |
|||||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
GALVANTECH |
24+ |
QFP |
6110 |
||||
GALVANTECH |
23+ |
PLCC52 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
25+ |
O-NEWQ |
541 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
GALVANTECH |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
GALVANTECH |
22+ |
PLCC52 |
20000 |
公司只做原装 品质保障 |
GVT7164芯片相关品牌
GVT7164规格书下载地址
GVT7164参数引脚图相关
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- GVT71512ZC18-7.5I
- GVT71512ZC18-6I
- GVT71512ZC18-5I
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- GVT71512D18TA-5
- GVT71512C18TA-6.7
- GVT71512C18TA-6
- GVT71512C18TA-5
- GVT71512C18TA-4.4
- GVT71512C18T-6.7
- GVT71512C18T-5
- GVT71512C18T-4.4
- GVS59BF
- GVS58BF
- GVS56F
- GVS56BF
- GVS55F
- GVS55BF
- GVS54F
- GVS54C
- GVS54BF
- GVS545C
- GVS53F
- GVS53C
- GVS53BF
- GVS39F
- GVS39BF
- GVS39A
- GVS38F
- GVS38BF
- GVS38A
- GVS36F
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2020-2-28
DdatasheetPDF页码索引
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