型号 功能描述 生产厂家 企业 LOGO 操作

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Infineon

英飞凌

64K x 18 Synchronous Burst RAM Pipelined Output

Infineon

英飞凌

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

RENESAS

瑞萨

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

RENESAS

瑞萨

30 W BTL audio power amplifier

The AN7164 is an integrated circuit designed for 30 W (VCC =21 V, 8 Ω) output power amplifier. High power output (BTL 30 W), low distortion and low noise are re alized. High reliability is obtained due to various kinds of protectors built in. Furthermore, on-off of output is possible from stand

Panasonic

松下

Inverse DIN 41612 Boardmount Socket

文件:33.27 Kbytes Page:2 Pages

3M

INSTRUMENTATION HANDLES

文件:86.3 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

GVT7164产品属性

  • 类型

    描述

  • 型号

    GVT7164

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    64K X 18 Synchronous Burst SRAM

更新时间:2025-11-3 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GALVANTECH
24+
NA/
396
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GALVANTECH
24+
QFP
880000
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GALVANTECH
24+
QFP
2500
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GALVANTEC
24+
SMD
20000
一级代理原装现货假一罚十
GALVANTECH
24+
QFP
32
大批量供应优势库存热卖
GALVANTECH
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
GALVANTECH
25+
QFP
3600
绝对原装!现货热卖!
24+
QFP
24
GALVANTECH
23+
TQFP1420
65480
GALVANTE
16+
QFP
2500
进口原装现货/价格优势!

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