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7164L价格

参考价格：￥9.0229

型号：7164L20YG 品牌：IDT 备注：这里有7164L多少钱，2025年最近7天走势，今日出价，今日竞价，7164L批发/采购报价，7164L行情走势销售排行榜，7164L报价。

型号	功能描述	生产厂家&企业	LOGO
7164L	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164	INSTRUMENTATION HANDLES 文件：86.3 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
7164	Inverse DIN 41612 Boardmount Socket 文件：33.27 Kbytes Page：2 Pages	3M	3M
7164L100DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L100DG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100DG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100DGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100DGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TDG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TDG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TDGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TDGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TPG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TPG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TPGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100TPGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100YG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100YG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100YGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L100YGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20DG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20DG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20DGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20DGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TDG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TDG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TDGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TDGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TPG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TPG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TPGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20TPGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20YG	封装/外壳：28-BSOJ（0.300"，7.62mm 宽）包装：管件描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
7164L20YG8	封装/外壳：28-BSOJ（0.300"，7.62mm 宽）包装：管件描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
7164L20YG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20YG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20YGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT
7164L20YGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT Integrated Device Technology, Inc.	IDT

7164L产品属性

类型
描述
型号
7164L
功能描述
静态随机存取存储器
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

7164L供应商更多...

更新时间：2025-8-8 16:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市芯为科技有限公司	7164L20TPG	Renesas	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
瀚佳科技(深圳)有限公司	7164L20TPG	IDT, Integrated Device Technol	24+	28-PDIP	56200	一级代理/放心采购	询价
深圳市恒创达实业有限公司	7164L70DB	IDT	17+	NA	6200	100%原装正品现货	询价
深圳市科恒伟业电子有限公司	7164L35DB	RENESAS	2450+	SOP	6540	只做原厂原装正品终端客户免费申请样品	询价
深圳市昊创电子有限公司	7164L35TDB	IDT	1043	DIP	35	全新原装现货-军工IC供应商	询价
标准国际(香港)有限公司	7164L25P	IDT			3	公司优势库存热卖中!!	询价
深圳市科芯源微电子有限公司	7164L20Y	IDT	25+		65248	百分百原装现货实单必成	询价
深圳市高捷芯城科技有限公司	7164L25YGI8	RENESAS(瑞萨)/IDT	24+	SOJ28	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市纳艾斯科技有限公司	7164L70DB	IDT	24+		80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市宏捷佳电子科技有限公司	7164L85TDB	IDT	2023+	DIP	50000	原装现货	询价

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7164L价格

7164L产品属性

7164L供应商更多...

7164L芯片相关品牌

7164L规格书下载地址

7164L参数引脚图相关

7164L数据表相关新闻

716W-X2/0保证原装正品，现货价美

715P47354LD3

715P22354KD3

7165-0796新到货只做原装，诚信为本！

719502C-2PT

7116-1546-02优势订货，全新原装

DdatasheetPDF页码索引