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位置：首页 > IC中文资料第4204页 > 7164L

7164L价格

参考价格：￥9.0229

型号：7164L20YG 品牌：IDT 备注：这里有7164L多少钱，2025年最近7天走势，今日出价，今日竞价，7164L批发/采购报价，7164L行情走势销售排行榜，7164L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
7164L

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164

INSTRUMENTATIONHANDLES

文件：86.3 Kbytes Page：1 Pages

KEYSTONE

Keystone Electronics Corp.

KEYSTONE
7164

InverseDIN41612BoardmountSocket

文件：33.27 Kbytes Page：2 Pages

3M

3M Electronics

3M
7164L100DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L35DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L35TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L45DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L45TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L55DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L55TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L70DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L70TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L85DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L85TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L100DG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TDG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TDG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TDGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TDGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TPG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TPG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TPGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100TPGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100YG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100YG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100YGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100YGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20DG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20DG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20DGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20DGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TDG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TDG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TDGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TDGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TPG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TPG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TPGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20TPGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20YG

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：管件 描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

ETC

知名厂家

7164L20YG8

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：管件 描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

ETC

知名厂家

7164L20YG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20YG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20YGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L20YGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT

7164L产品属性

  • 类型

    描述

  • 型号

    7164L

  • 功能描述

    静态随机存取存储器

  • RoHS

    否

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

7164L供应商更多...

更新时间：2025-7-23 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昊创电子有限公司
7164L35TDB
IDT
1043
DIP
35
全新原装现货-军工IC供应商
询价
深圳市科恒伟业电子有限公司
7164L35DB
RENESAS
2450+
SOP
6540
只做原厂原装正品终端客户免费申请样品
询价
深圳市高捷芯城科技有限公司
7164L25YGI8
RENESAS(瑞萨)/IDT
24+
SOJ28
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市安富世纪电子有限公司
7164L85DB
IDT
23+
30
全新原装正品现货,支持订货
询价
讯运(深圳/上海)电子有限公司
7164L20YGI
RENESAS(瑞萨)/IDT
2021+
SOJ-28
499
询价
深圳市航润创能电子集团有限公司
7164L85DB
IDT
21+
30
原装现货假一赔十
询价
深圳市诺美思科技有限公司
7164L20TPGI
Renesas Electronics Corporatio
23+/24+
28-DIP
8600
只供原装进口公司现货+可订货
询价
深圳市纳艾斯科技有限公司
7164L70DB
IDT
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
贸泽芯城（深圳）电子科技有限公司
7164L35TDB
IDT
23+
DIP
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
现代芯城（深圳）科技有限公司
7164L25YGI8
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价

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  • TSC
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7164L规格书下载地址

7164L参数引脚图相关

7164L数据表相关新闻

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