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位置：首页 > IC中文资料第9730页 > 7164

7164价格

参考价格：￥4.8134

型号：7164 品牌：Keystone 备注：这里有7164多少钱，2025年最近7天走势，今日出价，今日竞价，7164批发/采购报价，7164行情走势销售排行榜，7164报价。
型号 功能描述 生产厂家&企业 LOGO 操作
7164

INSTRUMENTATIONHANDLES

文件：86.3 Kbytes Page：1 Pages

KEYSTONE

Keystone Electronics Corp.

KEYSTONE
7164

InverseDIN41612BoardmountSocket

文件：33.27 Kbytes Page：2 Pages

3M

3M Electronics

3M
7164

包装：袋 描述：FERRULE RND HANDLE .312\ 盒子，外壳，机架 盒配件

KEYSTONE

Keystone Electronics Corp.

KEYSTONE
7164

包装：袋 描述：FERRULE RND HANDLE .312\ 盒子，外壳，机架 盒配件

KEYSTONE

Keystone Electronics Corp.

KEYSTONE
7164L

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L100DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L20YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L25YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L35DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L35TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L45DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L45TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L55DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L55TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L70DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L70TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L85DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164L85TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S100DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20TPG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20TPGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S20YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25TPG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25YG8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S25YGI8

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S35DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S35TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S45DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S45TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S55DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S55TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S70DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S70TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S85DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164S85TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
7164-50B2TH

InverseDIN41612BoardmountSocket

文件：33.27 Kbytes Page：2 Pages

3M

3M Electronics

3M
7164L100DG8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DG88

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DGI

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT
7164L100DGI8

CMOSStaticRAM64K

文件：749.13 Kbytes Page：10 Pages

IDT

Integrated Device Technology, Inc.

IDT

7164产品属性

  • 类型

    描述

  • 型号

    7164

  • 功能描述

    旋钮和转盘 FERRULE BRS NKL PL

  • RoHS

    否

  • 制造商

    Davies Molding

  • 材料

    Phenolic

  • 设计

    Set Screw

  • 轴尺寸

    0.25 in

  • 直径

    3/4 in

  • 颜色

    Black

  • 指示器型式

    Line

7164供应商更多...

更新时间：2025-8-2 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
7164S25YGI8
RENESAS(瑞萨)/IDT
24+
SOJ28
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市纳艾斯科技有限公司
7164S20YG8
IDT
24+
SOJ-28
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市科芯源微电子有限公司
7164L20Y
IDT
25+
65248
百分百原装现货 实单必成
询价
深圳市福田区绿盛电子商行
7164S20TPG
IDT
2018+
26976
代理原装现货/特价热卖!
询价
深圳市华睿芯科技有限公司
7164S20TP
IDT
24+
DIP28
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
7164L85DB
IDT
16+
N/A
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市昌和盛利电子有限公司
7164L25P
IDT
23+
DIP-28
9526
询价
深圳兆威电子有限公司
7164S20TPGI
INTEGRATED DEVICE TECH
22+
NA
125
原装正品支持实单
询价
深圳市科恒伟业电子有限公司
7164S20YG8
IDT
1948+
SOJ-28
6852
只做原装正品现货!或订货假一赔十!
询价
深圳市振宏微科技有限公司
7164S20Y
IDT
23+
NA
2976
专做原装正品,假一罚百!
询价

7164芯片相关品牌

  • ALPS
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • TECHPUBLIC
  • YEONHO

7164规格书下载地址

7164参数引脚图相关

7164数据表相关新闻

DdatasheetPDF页码索引

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