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7164价格

参考价格：￥4.8134

型号：7164 品牌：Keystone 备注：这里有7164多少钱，2025年最近7天走势，今日出价，今日竞价，7164批发/采购报价，7164行情走势销售排行榜，7164报价。

型号	功能描述	生产厂家&企业	LOGO
7164	Inverse DIN 41612 Boardmount Socket 文件：33.27 Kbytes Page：2 Pages	3M	3M
7164	包装：袋描述：FERRULE RND HANDLE .312\ 盒子，外壳，机架盒配件	KEYSTONE Keystone Electronics Corp.	KEYSTONE
7164	包装：袋描述：FERRULE RND HANDLE .312\ 盒子，外壳，机架盒配件	KEYSTONE Keystone Electronics Corp.	KEYSTONE
7164	INSTRUMENTATION HANDLES 文件：86.3 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
7164L	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L100DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S100DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TPG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TPGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25TPG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S35DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S35TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S45DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S45TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S55DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S55TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S70DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S70TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S85DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S85TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164-50B2TH	Inverse DIN 41612 Boardmount Socket 文件：33.27 Kbytes Page：2 Pages	3M	3M
7164L100DG8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT	IDT
7164L100DG88	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT	IDT
7164L100DGI	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT	IDT
7164L100DGI8	CMOS Static RAM 64K 文件：749.13 Kbytes Page：10 Pages	IDT	IDT

7164产品属性

类型
描述
型号
7164
功能描述
旋钮和转盘 FERRULE BRS NKL PL
RoHS
否
制造商
Davies Molding
材料
Phenolic
设计
Set Screw
轴尺寸
0.25 in
直径
3/4 in
颜色
Black
指示器型式
Line

7164供应商更多...

更新时间：2025-8-11 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	7164S25YGI8	RENESAS(瑞萨)/IDT	24+	SOJ28	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市纳艾斯科技有限公司	7164S20YG8	IDT	24+	SOJ-28	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市科芯源微电子有限公司	7164L20Y	IDT	25+		65248	百分百原装现货实单必成	询价
深圳市宏捷佳电子科技有限公司	7164L85TDB	IDT	2023+	DIP	50000	原装现货	询价
深圳市华睿芯科技有限公司	7164S20TP	IDT	24+	DIP28	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市科恒伟业电子有限公司	7164S20YG8	IDT	1948+	SOJ-28	6852	只做原装正品现货!或订货假一赔十!	询价
深圳市威雅利发展有限公司	7164L85DB	IDT	16+	N/A	30	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市福田区绿盛电子商行	7164S20TPG	IDT	2018+		26976	代理原装现货/特价热卖!	询价
深圳市创新迹电子有限公司	7164	NEC	2023+	M0DULE	8700	原装现货	询价
深圳兆威电子有限公司	7164S20TPGI	INTEGRATED DEVICE TECH	22+	NA	125	原装正品支持实单	询价

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716W-X2/0保证原装正品，现货价美
716W-X2/0保证原装正品，现货价美
2024-8-15
715P47354LD3
715P47354LD3
2023-4-21
715P22354KD3
715P22354KD3
2023-4-21
7165-0796新到货只做原装，诚信为本！
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12
719502C-2PT
https://hch01.114ic.com/
2020-11-13
7116-1546-02优势订货，全新原装
7116-1546-02 优势订货，全新原装
2020-9-2

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7164参数引脚图相关

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716W-X2/0保证原装正品，现货价美

715P47354LD3

715P22354KD3

7165-0796新到货只做原装，诚信为本！

719502C-2PT

7116-1546-02优势订货，全新原装

DdatasheetPDF页码索引