Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz

Description The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT techn

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

文件：495.3 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz

Description The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT techn

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz

Description The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT techn

High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz

封装/外壳：H-37248C-4 包装：带 描述：180W, GAN HEMT, 48V, 2496-2690MH 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

文件：495.3 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

文件：495.3 Kbytes Page：8 Pages

封装/外壳：H-37248C-4 包装：带 描述：180W, GAN HEMT, 48V, 2496-2690MH 分立半导体产品 晶体管 - FET，MOSFET - 射频

305.0 MHz SAW Filter

文件：160.86 Kbytes Page：2 Pages