Description

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, combined outputs,

2690 MHz, 48 V, 10 µs pulse width, 10 duty cycle

- Output power at P3dB = 170 W

- Drain Efficiency at P3dB = 65.5

- Gain at P3dB = 15 dB

• Capable of handling 10:1 VSWR @ 48 V, 180 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant