Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes Page：8 Pages

High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes Page：8 Pages

封装/外壳：H-37248-2 包装：散装 描述：700W GAN HEMT, 50V, 0.9-1.2GHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes Page：8 Pages

High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes Page：8 Pages

CANopen / DeviceNet Data Double-Ended Cordset

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