Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB), 1030 MHz,

50 V, 128 µs pulse width, 10 duty cycle

- Output power P3dB = 890 W

- Drain efficiency = 75

- Gain = 18 dB

• Capable of withstanding a 10:1 load mismatch (all

phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10 duty

cycle

• Human Body Model Class IC (per ANSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS-compliant