High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

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