GT10说明书PDF资料批发供应采购etc2-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

芯片资料
库存查询
行业新闻
生产厂家
替换型号
晶体管

型号	功能描述	生产厂家&企业
GT10	PNEUMATIC TURBINE VIBRATIORS [VIBTEC]	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商
GT1003A	N-Channel Enhancement Mode Power MOSFET Description TheGT1003Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT1003AA	Consumer electronic powersupply Description TheGT1003Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.This deviceissuitableforuseinhighfrequencySynchronous-recificationapplication. AEC-Q101Qualified Application ●Consumerelectronicpowersupply ●IsolatedDC/DCconverter ●Moto	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT1003D	N-Channel Enhancement Mode Power MOSFET Description TheGT1003Dusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters SynchronousRectification	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100DA120U	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnologywithpositivetemperaturecoefficient •SquareRBSOA •10μsshortcircuitcapability •HEXFRED®antiparalleldiodeswithultrasoftreverserecovery •TJmaximum=150°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical)	VishayVishay Siliconix 威世科技威世科技半导体
GT100DA120U	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •10μsshortcircuitcapability •HEXFRED®antiparalleldiodeswithultrasoftreverse recovery •TJmaximum=150°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry	VishayVishay Siliconix 威世科技威世科技半导体
GT100DA60U	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnologywithpositivetemperaturecoefficient •Speed4kHzto30kHz •SquareRBSOA •3μsshortcircuitcapability •FREDPt®antiparalleldiodeswithultrasoftreverserecovery •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(≤5n	VishayVishay Siliconix 威世科技威世科技半导体
GT100DA60U	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •3μsshortcircuitcapability •FREDPt®antiparalleldiodeswithultrasoft reverserecovery •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry	VishayVishay Siliconix 威世科技威世科技半导体
GT100DA60U_V01	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •3μsshortcircuitcapability •FREDPt®antiparalleldiodeswithultrasoft reverserecovery •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry	VishayVishay Siliconix 威世科技威世科技半导体
GT100N04D3	N-Channel Enhancement Mode Power MOSFET Description TheGT100N04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N04D3A	N-Channel Enhancement Mode Power MOSFET Description TheGT100N04D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N04K	N-Channel Enhancement Mode Power MOSFET Description TheGT100N04Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12D5	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12K	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12M	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12MA	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12MAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12T	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12TA	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12TA	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12TA	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100N12TA	N-Channel Enhancement Mode Power MOSFET Description TheGT100N12TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100NA120UX	High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES •TrenchIGBTtechnology •VerylowVCE(on) •SquareRBSOA •HEXFRED®clampingdiode •10μsshortcircuitcapability •Fullyisolatedpackage •Verylowinternalinductance(≤5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategorization:fordef	VishayVishay Siliconix 威世科技威世科技半导体
GT100P06D5A	P-Channel Enhancement Mode Power MOSFET Description TheGT100P06D5Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100P06K	P-Channel Enhancement Mode Power MOSFET Description TheGT100P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100P06KA	P-Channel Enhancement Mode Power MOSFET Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT100P06KA	P-Channel Enhancement Mode Power MOSFET Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT10-16DP-DS	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-16DP-HU	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-16DP-R	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-16DS-HU	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-2022PCF	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-2022SCF	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10-2428SCF	Subminiature ECU Interface Connectors InterfacePortionsandIn-linePortionsoftheVariousUnitsandDevices Features ●Subminiature:withrespecttoexisting040connectors. ●Frontretainerdesignpreventsincompleteinsertion.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT105N10F	N-Channel Enhancement Mode Power MOSFET Description TheGT105N10Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT105N10K	N-Channel Enhancement Mode Power MOSFET Description TheGT105N10Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT105N10KA	N-Channel Enhancement Mode Power MOSFET Description TheGT105N10KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT105N10M	N-Channel Enhancement Mode Power MOSFET Description TheGT105N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT105N10T	N-Channel Enhancement Mode Power MOSFET Description TheGT105N10Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体
GT10A-2022SCF	Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines Terminationofcoaxialcablesinautomotive,medicalandinstrumentationapplicationsutilizesonesteptocrimpthecenterconductor,shieldandouterinsulation. Features ●Costefficienttermination Highlyefficientandreliableonestepcrimpterminationallowshighvolumeproductionwi	HIROSEHirose Electric Company 广濑日本广濑电机株式会社
GT10D	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-100-100-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-100-100-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-100-100-0.25-2A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-105-27-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-15.1-11.5-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-150-150-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-150-150-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-150-150-0.25-2A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-300-300-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-300-300-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-300-300-0.25-2A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-30-25-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-32-25-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-33-24.4-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-46-44.5-0.25-1A	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10D-60-30-0.25-0	Thermal Pad Features •Smoothsurface&lowcontactresistance •Lowthermalresistance •Highstabality •Greatreliability Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,Pow	TGLOBAL T-Global Technology
GT10G131	Silicon N Channel IGBT Strobe Flash Applications GT45F122,45F122Informaions	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
GT10G131	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
GT10J301	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
GT10J301	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝

GT10产品属性

类型
描述
型号
GT10
制造商
VIBTEC
功能描述
PNEUMATIC TURBINE VIBRATOR
制造商
VIBTEC
功能描述
PNEUMATIC TURBINE VIBRATOR; Centrifugal
Force
2400N; Temperature
Max
120C;
SVHC
No SVHC(19-Dec-2012); Connection
Size
7mm;
Material
Aluminium ;RoHS
Compliant
Yes

GT10供应商更多...

更新时间：2025-6-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	GT10-16DP-DS(70)	原厂原包	24+	原装	38560	原装进口现货,工厂客户可以放款。17377264928微信同	询价
深圳市科恒伟业电子有限公司	GT108M-UQ4	GREENCHIP	1822+	QFN24	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市毅创腾电子科技有限公司	GT10-1310TRU-SMCEIS-I	GTRAN			256	正品原装--自家现货-实单可谈	询价
深圳市美思瑞电子科技有限公司	GT10J321	TOSHIBA/东芝	22+	TO220	12245	现货,原厂原装假一罚十!	询价
深圳市骏创达科技有限公司	GT10A-2022SCF	HIROSE/广濑	2508+	原厂封装	343380	一级代理,原装现货	询价
深圳市南科功率半导体有限公司	GT100N04D3	NK/南科功率	2025+	DFN3*3-8L	986966	国产	询价
深圳市创新迹电子有限公司	GT10J321		23+	TO220	7300	专注配单,只做原装进口现货	询价
贸泽芯城（深圳）电子科技有限公司	GT108M	GREENCH	23+	QFN24	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
现代芯城（深圳）科技有限公司	GT1003B		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市坤融电子科技有限公司	GT10J312	TOSHIBA/东芝	24+	TO-263	6000	只做原厂渠道可追溯货源	询价

GT10芯片相关品牌

GT10规格书下载地址

GT10参数引脚图相关

GT10数据表相关新闻

GT17HN-4DP-2DS(C)
进口代理
2025-3-26
GT24C1024-2GLI
GT24C1024-2GLI，全新原装.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-11-27
GT50GR22
GT50GR22，当天发货0755-82732291全新原装现货或门市自取.
2020-8-1
GST5009MLF
GST5009MLF，全新原装当天发货或门市自取0755-82732291.
2019-11-25
GSP-812
GSP-812，全新原装当天发货或门市自取0755-82732291.
2019-4-9
GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货
GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货
2019-3-21

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101

您好,欢迎来到114ic资料网！

GT10产品属性

GT10供应商更多...

GT10芯片相关品牌

GT10规格书下载地址

GT10参数引脚图相关

GT10数据表相关新闻

GT17HN-4DP-2DS(C)

GT24C1024-2GLI

GT50GR22

GST5009MLF

GSP-812

GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货

DdatasheetPDF页码索引