PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

GT10 双频RTD高精度定位终端

N-Channel Enhancement Mode Power MOSFET

Description The GT1003Auses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Consumer electronic powersupply

Description The GT1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use in high frequency Synchronous-recification application. AEC-Q101 Qualified Application ●Consumer electronic powersupply ●Isolated DC/DCconverter ●Moto

N-Channel Enhancement Mode Power MOSFET

Description The GT1003D uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters Synchronous Rectification

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability •HEXFRED® antiparallel diodes with ultrasoft reverse recovery •TJmaximum = 150 °C • Fully isolated package • Very low internal inductance (5 nH typical)

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 n

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A

FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for def

P-Channel Enhancement Mode Power MOSFET

Description The GT100P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

Subminiature ECU Interface Connectors

Interface Portions and In-line Portions of the Various Units and Devices Features ● Subminiature: with respect to existing 040 connectors. ● Front retainer design prevents incomplete insertion.

N-Channel Enhancement Mode Power MOSFET

Description The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT105N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT105N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines

Termination of coaxial cables in automotive, medical and instrumentation applications utilizes one step to crimp the center conductor, shield and outer insulation. Features ● Cost efficient termination Highly efficient and reliable one step crimp termination allows high volume production wi

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Thermal Pad

Features • Smooth surface & low contact resistance • Low thermal resistance • High stabality • Great reliability Applications Electronic components - Electric Vehicles, 5G, Autopilot System, Mobile Phone, AIOT, HPC (High Performance Computing), Server, IC, CPU, MOS, LED, Mother Board,Pow

Silicon N Channel IGBT Strobe Flash Applications

GT45F122, 45F122 Informaions

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(