丝印代码：GT10N10；N-Channel Enhancement Mode Power MOSFET

Description The GT10N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

100V N Channel SGT MOSFET

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery

TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Logic Level TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

SIPMOS Power-Transistor

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