位置：首页 > IC中文资料 > GT100P06KA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GT100P06KA | P-ChannelEnhancementModePowerMOSFET Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 |  |   |
GT100P06KA | P-ChannelEnhancementModePowerMOSFET Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | | |
P-ChannelEnhancementModePowerMOSFET Description TheGT100P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
银茂微 |
23+ |
MODULE |
4500 |
专营国产功率器件 |
|||
HAMAT |
23+ |
SIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SILVERMICRO |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
Gowanda Electronics |
25+ |
径向 垂直(开放式) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
GT100P06KA芯片相关品牌
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DdatasheetPDF页码索引
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