位置：首页 > IC中文资料第9778页 > GSA160
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GSA160 | Slow Blow Fuse Series 文件：90.82 Kbytes Page：2 Pages | BEL |   | |
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode 文件：1.19053 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
16.0A GLASS PASSIVATED RECTIFIER 文件：133.5 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
普通整流二极管 Generral Purpose Diodes 1.0A-16A | SENODIA 深迪半导体 | | ||
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic 文件：543.14 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode 文件：1.2945 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
Slow Blow Fuse Series 文件：429.25 Kbytes Page：2 Pages | BEL | | ||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert | MOTOROLA 摩托罗拉 | | ||
MOSFET BROADBAND RF POWER FET The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal | MOTOROLA 摩托罗拉 | | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | | ||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(10A,320-380V,125W)
| MOSPEC 统懋 | |
GSA160产品属性
- 类型
描述
- 型号
GSA160
- 功能描述
Fuse
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
QIMONDA |
2016+ |
BGA |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
2026+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
QIMONDA |
08+ |
BGA |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
QIMONDA |
25+ |
FBGA |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
QIMONDA |
23+ |
BGA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON/英飞凌 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
QIMONDA |
2008 |
FBGA |
25720 |
原装现货 |
|||
GSI |
24+ |
BGA |
13718 |
只做原装 公司现货库存 |
|||
QIMONDA |
FBGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
QIMONDA |
2450+ |
BGA |
9850 |
只做原装正品现货或订货假一赔十! |
GSA160规格书下载地址
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- GSA14DRMD
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- GSA125
- GSA12
- GSA10-R
- GSA1015
- GSA100
- GSA10
- GSA1.6
- GSA1.25
- GSA_17
- GSA_13
- GS9092A
- GS9092
- GS9091B
- GS9090B
- GS9090A
- GS9090
- GS9078A
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