Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - High case dielectric strength of 1500 VRMS - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

Single Phase 4.0AMP.Glass Passivated Bridge Rectifiers

Features ◇ Ideal for printed circuit board ◇ Reliable low cost construction ◇ Plastic material has Underwriters Laboratory Flammability Classification 94V-0 ◇ High case dielectric strength of 1500VRMS ◇ Surge overload rating to 150 amperes peak ◇ High temperature soldering guaranteed: 260°C

4A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifier

FEATURES ● Ideal for printed circuit board ● High case dielectric strength of 1500 VRMS ● High surge current capability ● UL Recognized File # E-326243 ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ●

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 4.0 Amperes FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification 94V-0 • In compliance with EU RoH

GLASS PASSIVATED BRIDGE RECTIFIERS

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BRIDGE RECTIFIERS

Bridge

4A, 200V, Standard Bridge Rectifier

SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

文件：63.92 Kbytes Page：2 Pages

SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

文件：63.23 Kbytes Page：2 Pages

封装/外壳：4-ESIP，GBU 包装：卷带（TR） 描述：DIODE BRIDGE 4A 200V GBU 分立半导体产品 二极管 - 桥式整流器

Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 4.0AMPS. Glass Passivated Bridge Rectifiers

文件：128.58 Kbytes Page：2 Pages

4A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifiers

文件：213.81 Kbytes Page：4 Pages

Glass Passivated Single-Phase Bridge Rectifier

文件：209.07 Kbytes Page：4 Pages

封装/外壳：4-ESIP，GBU 包装：卷带（TR） 描述：DIODE BRIDGE 4A 200V GBU 分立半导体产品 二极管 - 桥式整流器

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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