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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH

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更新时间:2025-10-22 16:36:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
TO-263
5237
只做原厂渠道 可追溯货源
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRGS4B60KD1TRRP即刻询购立享优惠#长期有货
IR
24+
TO-263
5240
只做原装假一赔十
Infineon/英飞凌
24+
TO-263
25000
原装正品,假一赔十!
INFINEON/英飞凌
2022+
D2-PAK(TO-263)
8000
只做原装支持实单,有单必成。
IR
24+
N/A
8000
全新原装正品,现货销售
IR
24+
D2-Pak
8866
IR
23+
TO-263
30000
代理全新原装现货,价格优势
IR
25+
TO-263
65248
百分百原装现货 实单必成
INFINEON/英飞凌
2407+
IC
30098
全新原装!仓库现货,大胆开价!

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