63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

63A, 600V, UFS Series N-Channel IGBT

The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel