N-ChannelEnhancementModePowerMOSFET

Description TheG25N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

DESCRIPTION TheUTC25N06isanN-channelenhancementmodepowerMOSFET,whichprovideslowgatecharge,avalancheruggedtechnology,andsoon. TheUTC25N06isuniversallyappliedinDC-DC&DC-ACconverters,motorcontrol,highcurrent,highspeedswitching,solenoidandrelaydrivers,re

FastSwitching

•FEATURES •DrainCurrentID=25A@TC=25℃ •DrainSourceVoltage :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.065Ω(Max) •FastSwitching •APPLICATIONS •Switchingregulators •Switchingconverters,motordrivers,relaydrivers

60VN-ChannelPowerMosfet

Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwitching LowONResistance(Rdson≤29mΩ) LowGateCharge LowReversetransfercapacitances 100SinglePulseavalancheenergyTest

60VN-ChannelPowerMosfet

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwit

25A,60VN-CHANNELPOWERMOSFET

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