丝印代码：25N06；60V N-Channel Power Mosfet

Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

丝印代码：25N06；60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

25A, 60V N-CHANNEL    POWER MOSFET

The UTC 25N06 is an N-channel enhancement mode power  MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulat ors, audio am • Low Gate Charge   \n• Avalanche Rugged Technology \n• Repetitive Avalanche at 100°C \n• Operating Temperature: 150°C   \n• Application Oriented Characterization;

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, re

Fast Switching

• FEATURES • Drain Current ID= 25A@ TC=25℃ • Drain Source Voltage : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) • Fast Switching • APPLICATIONS • Switching regulators • Switching converters,motor drivers,relay drivers

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, re

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, re

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

N-Channel 6 0-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

MOS(场效应管)

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.048 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes Page：4 Pages

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes Page：4 Pages