丝印代码：G2453Q1；MSP430G2x53 Automotive Mixed-Signal Microcontrollers

1 Features 1• Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Le

丝印代码：G245A；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

* 4.5-V to 5.5-V VCC Operation * Max tpd of 5.5 ns at 5 V * 3-State Outputs Drive Bus Lines Directly * pnp Inputs Reduce dc Loading

丝印代码：G245A；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

* 4.5-V to 5.5-V VCC Operation * Max tpd of 5.5 ns at 5 V * 3-State Outputs Drive Bus Lines Directly * pnp Inputs Reduce dc Loading

AGILENT 1220 INFINITY II HPLC SYSTEM FOR CANNABINOID POTENCY TESTING

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T-1, (3-mm) Round, Quad PCB Mount LED Indicator

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

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VHF power MOS transistor

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