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BD245晶体管资料
BD245别名：BD245三极管、BD245晶体管、BD245晶体三极管
BD245生产厂家：美国得克萨斯仪表公司
BD245制作材料：Si-NPN
BD245性质：低频或音频放大 （LF）_功率放大 （L）
BD245封装形式：直插封装
BD245极限工作电压：45V
BD245最大电流允许值：10A
BD245最大工作频率：<1MHZ或未知
BD245引脚数：3
BD245最大耗散功率：80W
BD245放大倍数：
BD245图片代号：B-62
BD245vtest：45
BD245htest：999900
- BD245atest：10
BD245wtest：80
BD245代换 BD245用什么型号代替：BD213-45,BD249,BD257/45,TIP33,3DD68B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD245 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 |   | |
BD245 | NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS | COMSET | | |
BD245 | isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C • Complement to Type BD246/A/B/C APPLICATIONS • Designed for use in general purpose power a | ISC 无锡固电 | | |
BD245 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | |
BD245 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD246/A/B/C APPLICATIONS • For use in medium power linear and switching applications | SAVANTIC | | |
BD245 | Silicon NPN Power Transistors 文件：146.39 Kbytes Page：3 Pages | SAVANTIC | | |
BD245 | Silicon NPN Power Transistor 文件：134.97 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD245 | Transistor | COMSET | | |
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD246/A/B/C APPLICATIONS • For use in medium power linear and switching applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C • Complement to Type BD246/A/B/C APPLICATIONS • Designed for use in general purpose power a | ISC 无锡固电 | | ||
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS | COMSET | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS | COMSET | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C • Complement to Type BD246/A/B/C APPLICATIONS • Designed for use in general purpose power a | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD246/A/B/C APPLICATIONS • For use in medium power linear and switching applications | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD246/A/B/C APPLICATIONS • For use in medium power linear and switching applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C • Complement to Type BD246/A/B/C APPLICATIONS • Designed for use in general purpose power a | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS | COMSET | | ||
Silicon NPN Power Transistors 文件：146.39 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：134.97 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor 文件：134.97 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：146.39 Kbytes Page：3 Pages | SAVANTIC | | ||
Transistor | COMSET | | ||
TRANS NPN 80V 10A | BOURNS 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS NPN 80V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon NPN Power Transistors 文件：146.39 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：134.97 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 100V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
isc Silicon NPN Power Transistor 文件：194.59 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B | NTE | | ||
N-channel silicon field-effect transistors 文件：97.4 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
N-channel silicon field-effect transistors 文件：97.4 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
VHF power MOS transistor 文件：91.6 Kbytes Page：12 Pages | PHILIPS 飞利浦 | |
BD245产品属性
- 类型
描述
- 型号
BD245
- 功能描述
两极晶体管 - BJT 80W NPN Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns Inc. |
25+ |
SOT-93 |
20948 |
样件支持,可原厂排单订货! |
|||
Bourns Inc. |
25+ |
SOT-93 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
2026+ |
TO-3P |
130 |
原装正品 假一罚十! |
|||
ST/意法 |
25+ |
TO-3P |
45000 |
ST/意法全新现货BD245B即刻询购立享优惠#长期有排单订 |
|||
TI |
24+/25+ |
238 |
原装正品现货库存价优 |
||||
ST |
25+ |
TO-3P |
20000 |
原装，请咨询 |
|||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
ST |
24+ |
TO-218 |
15000 |
原装现货热卖 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
BOURNS |
2023+ |
SMD |
6911 |
安罗世纪电子只做原装正品货 |
BD245规格书下载地址
BD245参数引脚图相关
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- BD243BG
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- BD242CG
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- BD242BG
- BD242B
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- BD242
- BD241F
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- BD241C
- BD241B
- BD241A
- BD241
- BD240C
- BD240B
- BD240A
- BD240
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DdatasheetPDF页码索引
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