丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2412；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

Lan transformer,  SMT

• 1.RoHS Compliant;\n2. Designed to meet IEEE802.3af requirements； \n3.Storage Temperature：-40℃ To +85℃，Operating Temperature:-40℃ To +85℃;\n4.SRP: Conforms to IPC/JEDEC J-STD-020;\n5.Solderability:Conforms to ANSI/J-STD-002;\n6.Packaging with tapes and reels.;

Lan transformer,  SMT

• 1.RoHS Compliant;\n2.Designed to meet IEEE802.3at requirements;\n3.Storage Temperature：-40℃ To +85℃，Operating Temperature:-40℃ To +85℃;\n4.SRP: Conforms to IPC/JEDEC J-STD-020;\n5.Solderability:Conforms to ANSI/J-STD-002;\n6.Packaging with tapes and reels.;

Lan transformer,  SMT

• 1.RoHS Compliant;\n2.Designed to meet IEEE802.3 requirements;\n3.Storage Temperature：-40℃ To +85℃，Operating Temperature: 0℃ To +70℃;\n4.SRP: Conforms to IPC/JEDEC J-STD-020;\n5.Solderability:Conforms to ANSI/J-STD-002;\n6.Packaging with tapes and reels.;

100/1000 Base-T transformer Module

  RoHS Compliant   IEEE802.3af compliant performance   With 350mA Current Capability   Operating temperature: 0℃ to +70℃  Storage temperature: -40℃ to +85℃

6000VDC Isolated 1W Double Output SIP-Package

Features RoHS compliant Efficiency up to 75 6kVDC Isolation Wide temperature performance at full 1 Watt load,-40℃ to 85℃ Double output Internal SMD Construction Continuous short circuit Protection

6000VDC Isolated 2W Double Output SIP-Package

Features RoHS compliant Efficiency up to 81 6kVDC Isolation Wide temperature performance at full 2Watt load,-40℃ to 85℃ Double output Internal SMD Construction SIP Package Continuous short circuit Protection

6000VDC Isolated 1W Double Output SIP-Package

Features RoHS compliant Efficiency up to 75 6kVDC Isolation Wide temperature performance at full 1 Watt load,-40℃ to 85℃ Double output Internal SMD Construction Continuous short circuit Protection

6000VDC Isolated 2W Double Output SIP-Package

Features RoHS compliant Efficiency up to 81 6kVDC Isolation Wide temperature performance at full 2Watt load,-40℃ to 85℃ Double output Internal SMD Construction SIP Package Continuous short circuit Protection

DUAL/SINGLE OUTPUT DC-DC CONVERTER

文件：138.68 Kbytes Page：2 Pages

FIXED INPUT, ISOLATED & UNREGULATED SINGLE / DUAL OUTPUT

文件：1.98746 Mbytes Page：5 Pages

1W, FIXED INPUT, ISOLATED & UNREGULATED SINGLE / DUAL OUTPUT

文件：1.01458 Mbytes Page：5 Pages

Reinforced insulation

文件：1.24114 Mbytes Page：5 Pages

Reinforced insulation

文件：1.25202 Mbytes Page：5 Pages

DC/DC Converter

文件：1.31438 Mbytes Page：5 Pages

SIP package

文件：1.18482 Mbytes Page：5 Pages

FIXED INPUT,ISOLATED&UNREGULATED Single?뷗ual Output DC?뷗C Converter

文件：510.36 Kbytes Page：2 Pages

FIXED INPUT,ISOLATED&UNREGULATED Single?뷗ual Output DC?뷗C Converter

文件：878.15 Kbytes Page：2 Pages

DUAL/SINGLE OUTPUT DC-DC CONVERTER

文件：138.68 Kbytes Page：2 Pages

Reinforced insulation

文件：1.24114 Mbytes Page：5 Pages

Reinforced insulation

文件：1.25202 Mbytes Page：5 Pages

DC/DC Converter

文件：1.31438 Mbytes Page：5 Pages

SIP package

文件：1.18482 Mbytes Page：5 Pages

FIXED INPUT,ISOLATED&UNREGULATED Single?뷗ual Output DC?뷗C Converter

文件：510.36 Kbytes Page：2 Pages

FIXED INPUT,ISOLATED&UNREGULATED Single?뷗ual Output DC?뷗C Converter

文件：878.15 Kbytes Page：2 Pages

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)