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型号 功能描述 生产厂家 企业 LOGO 操作
G231

Compact MiniDIP, 2W Single & Dual Output DC/DC Converters

文件:75.01 Kbytes Page:2 Pages

MPD

丝印代码:G2312;N-Channel Enhancement Mode Power MOSFET

Description The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

丝印代码:G2312;MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

TI

德州仪器

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2310 is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2313 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2313 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Low on-resistance

GTM

勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件:353.75 Kbytes Page:4 Pages

ETL

亚历电子

Screw-In Rubber Pocket Bumpers

文件:120.09 Kbytes Page:1 Pages

HEYCO

Break-Away Bumpers

文件:132.1 Kbytes Page:1 Pages

HEYCO

Break-Away Bumpers

文件:132.09 Kbytes Page:1 Pages

HEYCO

20V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

ETL

亚历电子

Break-Away Bumpers

文件:132.09 Kbytes Page:1 Pages

HEYCO

Break-Away Bumpers

文件:132.1 Kbytes Page:1 Pages

HEYCO

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件:359.31 Kbytes Page:4 Pages

ETL

亚历电子

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件:367.95 Kbytes Page:4 Pages

ETL

亚历电子

Break-Away Bumpers

文件:132.1 Kbytes Page:1 Pages

HEYCO

Break-Away Bumpers

文件:132.09 Kbytes Page:1 Pages

HEYCO

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

Compact MiniDIP, 2W High Isolation DC/DC Converters

文件:77.97 Kbytes Page:2 Pages

MPD

Compact MiniDIP, 2W Wide Input Range DC/DC Converters

文件:164.16 Kbytes Page:2 Pages

MPD

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:368.44 Kbytes Page:15 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:280 Kbytes Page:16 Pages

NSC

国半

G231产品属性

  • 类型

    描述

  • 型号

    G231

  • 制造商

    MPD

  • 制造商全称

    MicroPower Direct, LLC

  • 功能描述

    Compact MiniDIP, 2W Single & Dual Output DC/DC Converters

更新时间:2026-3-18 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GTM
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
GTM
24+
SOT-23
9600
原装现货,优势供应,支持实单!
GTM
新年份
GTM
3250
原装正品大量现货,要多可发货,实单带接受价来谈!
GTM
23+
SOT-23
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
GTM
23+
SOT-23
50000
全新原装正品现货,支持订货
GTM
25+
SOT-23
2800
原装现货!可长期供货!
IR
24+
TO-3
152
VBSEMI/微碧半导体
24+
SOT23-3
7800
全新原厂原装正品现货,低价出售,实单可谈
GTM
22+
GTM
20000
只做原装

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