N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2310 is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：353.75 Kbytes Page：4 Pages

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages