| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G222 | Compact MiniDIP, 2W Single & Dual Output DC/DC Converters 文件：75.01 Kbytes Page：2 Pages | MPD |   | |
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2221；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
Data Card Module Power Management System 文件：62.82 Kbytes Page：2 Pages | GMT 致新科技 | | ||
Screw-In Rubber Pocket Bumpers 文件：120.09 Kbytes Page：1 Pages | HEYCO | | ||
Data Card Module Power Management System | GMT 致新科技 | | ||
Data Card Module Power Management System | GMT 致新科技 | | ||
Screw-In Rubber Pocket Bumpers 文件：120.09 Kbytes Page：1 Pages | HEYCO | | ||
Screw-In Rubber Pocket Bumpers 文件：120.09 Kbytes Page：1 Pages | HEYCO | | ||
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | | |
DC-DC芯片 | GMT 致新科技 | | ||
Screw-In Rubber Pocket Bumpers 文件：120.09 Kbytes Page：1 Pages | HEYCO | | ||
Low Cost, 2W Compact MiniDIP DC/DC Converters 文件：199.1 Kbytes Page：2 Pages | MPD | | ||
High Isolation, 2W Low Cost, MiniDIP DC/DC Converters 文件：204.42 Kbytes Page：2 Pages | MPD | | ||
Compact MiniDIP, 2W High Isolation DC/DC Converters 文件：77.97 Kbytes Page：2 Pages | MPD | | ||
Compact MiniDIP, 2W Wide Input Range DC/DC Converters 文件：164.16 Kbytes Page：2 Pages | MPD | | ||
丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD | ONSEMI 安森美半导体 | | ||
SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac | MOTOROLA 摩托罗拉 | | ||
SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available | MOTOROLA 摩托罗拉 | | ||
Field Effect Transistor Dual Gate N-Channel MOSFET Field Effect Transistor Dual Gate N–Channel MOSFET | NTE | | ||
Transistor array to drive the small motor Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated | PANASONIC 松下 | |
G222产品属性
- 类型
描述
- Vin (V)max.：
5.5
- DCDCCH：
2
- DCDCFSW MHz：
1.5
- ChargerA：
--
- LDOCH：
2
- RTCLDOCH：
--
- Note：
DCDC1~2 0.6A/1ALDO1 = 3V/3.3V/250mA
- Package：
TQFN3X3-16
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UNKNOWN |
23+ |
NA |
4306 |
专做原装正品,假一罚百! |
|||
GMT/致新 |
24+ |
QFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
UPD |
25+ |
全新-电源模块 |
10238 |
UPD电源模块G222E交期短价格好#即刻询购立享优惠#长期有排单订 |
|||
GMT |
24+ |
N/A |
20933 |
原装原装原装 |
|||
GMT/致新 |
23+ |
TQFN5X5-32 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
MEPCO/CENTRALAB |
2015+ |
SMD/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
GMT(致新) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
GMT/致新 |
23+ |
QFN |
50000 |
只做原装正品 |
|||
GMT |
F |
1318+ |
50 |
全新 发货1-2天 |
|||
GMT/致新 |
26+ |
TQFN5X5-32 |
6000 |
原装现货 |
G222规格书下载地址
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2013-1-29
DdatasheetPDF页码索引
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