位置：首页 > IC中文资料第5921页 > G20N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
G20N60 | FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration 文件：364.5 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Corporation |  | | |
FastSwitching 文件：95.42 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel650-V(D-S)SuperJunctionMOSFET 文件：1.15549 Mbytes Page：11 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
20A600VN-channelenhancedfieldeffecttransistor 文件：833.85 Kbytes Page：6 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
G20N60产品属性
- 类型
描述
- 型号
G20N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
699 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
20+ |
TO-247 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
INFINEON |
21+ |
TO3P |
699 |
原装现货假一赔十 |
|||
TO-247 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
INFINEON |
25+23+ |
TO3P |
46472 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FSC |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
INFINEON |
24+ |
TO3P |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
G20N60芯片相关品牌
G20N60规格书下载地址
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2013-1-29
DdatasheetPDF页码索引
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