N-Channel Enhancement Mode Power MOSFET

Description The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

200V N Channel TRENCH MOSFET

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages