丝印代码：G180；Zener Diodes

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Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

丝印代码：G180C06；N and P Channel Enhancement Mode Power MOSFET

Description The G180C06Y uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G180N06；Dual N-Channel Enhancement Mode Power MOSFET

Description The G180N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G180P06；P-Channel Enhancement Mode Power MOSFET

Description The G180P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

包装：散装 描述：EXPAND SLEEVE 1/2\ 电缆，电线 - 管理 螺线包材、伸缩套管

Fan Guards

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包装：散装 描述：FAN GUARD METAL 180MM 风扇，热管理 风扇 - 护手板，滤波器和套管

单口千兆网络隔离变压器

网络变压器

GaAs功率放大器芯片

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und