丝印代码：G100；Zener Diodes

文件：1.54174 Mbytes Page：3 Pages

丝印代码：G100；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes Page：16 Pages

丝印代码：G100；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes Page：16 Pages

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

微型断路器

丝印代码：G1002；N-Channel Enhancement Mode Power MOSFET

Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1002；N-Channel Enhancement Mode Power MOSFET

Description The G1002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G1002L；N-Channel Enhancement Mode Power MOSFET

Description The G1002L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1003A；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1003A；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

丝印代码：G1003B；N-Channel Enhancement Mode Power MOSFET

Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1005；PWM applications

The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management

丝印代码：G1006；N-Channel Enhancement Mode Power MOSFET

Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1007；Power switching application

General Description The G1007 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application a nd LED b acklighting. Application ● Power switching application ● LED backlighting

丝印代码：G1008B；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G1008B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100C04；N and P Channel Enhancement Mode Power MOSFET

Description The G100C04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100N03；N-Channel Enhancement Mode Power MOSFET

Description The G100N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100N03；N-Channel Enhancement Mode Power MOSFET

Description The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100N03；N-Channel Enhancement Mode Power MOSFET

Description The G100N03D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G100N04；PWM applications

Description The G100N04T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● PWM ● Load Switching

丝印代码：G100P04；P-Channel Enhancement Mode Power MOSFET

Description The G100P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100P04；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G100P04H-HZR；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G100MS7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features • VCE = 1200 V • IC = 100 A • Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C • Short circuit ruggedness 8 μs • Wide range of dv/dt controllability • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Industrial power supplies

丝印代码：G100H603；600V high speed switching series third generation

文件：2.04361 Mbytes Page：14 Pages

丝印代码：G1003A；N- Enhancement Mode Field Effect Transistor

文件：1.30935 Mbytes Page：7 Pages

Gate Turn Off Thyristors

We offer a broad range of high specification devices incorporating advanced feature such as buffer layer, fine pattern and transparent emitter technologies. Devices with voltageratings to 6kV (3.8kV DC link) and controllable current ratings of up to 4kA are available to meet the toughest demands in ;

High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

包装：散装 描述：WIRE WRAP GUN 18 - 32 AWG 工具 绕接线

包装：散装 描述：WIRE WRAP GUN 18 - 32 AWG 工具 绕接线

电线缠绕

All Dimension In MM

文件：38.77 Kbytes Page：1 Pages

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

10 segment light bar

文件：122.04 Kbytes Page：2 Pages

10 segment light bar

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10 segment light bar

文件：122.04 Kbytes Page：2 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

INDUSTRY STANDARDS

文件：1.519 Mbytes Page：16 Pages

Surface Mount Standard Rectifiers

文件：3.10724 Mbytes Page：3 Pages

Programmable Power Supplies

文件：85.61 Kbytes Page：2 Pages

Potting Box

文件：132.4 Kbytes Page：1 Pages

Potting Box

文件：132.4 Kbytes Page：1 Pages

Programmable Power Supplies

文件：118.52 Kbytes Page：2 Pages

丝印代码：D-PAK；Surface Mount Standard Rectifiers

文件：3.10724 Mbytes Page：3 Pages

Surface Mount General Purpose Silicon Rectifiers

文件：488.93 Kbytes Page：3 Pages

丝印代码：I-PAK；Surface Mount Standard Rectifiers

文件：3.10724 Mbytes Page：3 Pages

Programmable Power Supplies

文件：118.3 Kbytes Page：2 Pages