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型号 功能描述 生产厂家 企业 LOGO 操作
G080

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

丝印代码:G080N06;N-Channel Enhancement Mode Power MOSFET

Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G080N10;N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G080N10;N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G080P06;P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G080P06;P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G080N03;N-Channel Enhancement Mode MOSFET

文件:949.63 Kbytes Page:10 Pages

HUAYI

华羿微电

丝印代码:G080ND03L;Dual N-Channel Enhancement Mode MOSFET

文件:878.86 Kbytes Page:10 Pages

HUAYI

华羿微电

-60V P Channel TRENCH MOSFET

The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

GOFORD

谷峰半导体

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

Special Encoders & Sensors

文件:281.61 Kbytes Page:2 Pages

IVO

堡盟电子

包装:袋 描述:LINEAR STAGE T10F 光电器件 光力学

EXCELITAS

埃赛力达

包装:盒 描述:LINEAR STAGE TS10 M 光电器件 光力学

EXCELITAS

埃赛力达

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

-60V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

JFET-INPUT OPERATIONAL AMPLIFIERS

文件:368.29 Kbytes Page:19 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

G080产品属性

  • 类型

    描述

  • Configuration:

    N channel

  • ESD:

    NO

  • VDS:

    60V

  • Id at 25℃(max):

    80A

  • PD(max):

    110W

  • Vgs(th)typ(V):

    3.1V

  • RDS(on)(typ)(@10V):

    6.6mΩ

  • Qg(nC):

    77

  • Ciss:

    3408

  • Crss:

    212

更新时间:2026-5-23 14:09:00
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