| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G080N10M | N-Channel Enhancement Mode Power MOSFET Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
G |
24+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
G |
25+ |
S |
2000 |
原装正品,假一罚十! |
|||
AUO |
LCD |
50000 |
|||||
RICOH |
22+ |
BGA |
2000 |
进口原装!现货库存 |
|||
FERRAZ |
模块 |
1520 |
全新原装正品 数量多可订货 一级代理优势 |
||||
CMO |
24+ |
65200 |
|||||
AUO |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CMO |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
AUO |
SMD |
120 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
G080N10M规格书下载地址
G080N10M参数引脚图相关
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G080N10M数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16
DdatasheetPDF页码索引
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