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位置：首页 > IC中文资料第361页 > FZT65

FZT65价格

参考价格：￥2.9982

型号：FZT651QTA 品牌：Diodes 备注：这里有FZT65多少钱，2025年最近7天走势，今日出价，今日竞价，FZT65批发/采购报价，FZT65行情走势销售排行榜，FZT65报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FZT651

SOT223 NPN SILICON PLANAR

Features • BVCEO > 60V • Maximum continuous current IC = 3A • Low Saturation Voltage • Complementary PNP Type – FZT751 • Lead-Free Finish; RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP cap

DIODES

美台半导体

FZT651

NPN Silicon Planar High Performance Transistors

Features ● 60 Volt VCEO. ● 3 Amp continuous current. ● Low saturation voltage.

KEXIN

科信电子

FZT651

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS

FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage

Zetex

FZT651Q

60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > 60V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

FZT651QTA

60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > 60V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

FZT651QTC

60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > 60V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

FZT653

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * Low saturation voltage

Zetex

FZT653

SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 100V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

FZT653

NPN Silicon Planar High Performance Transistor

Features ● Low saturation voltage

KEXIN

科信电子

FZT653Q

100V NPN HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 100V • IC = 2A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

DIODES

美台半导体

FZT653QTA

100V NPN HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 100V • IC = 2A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

DIODES

美台半导体

FZT653TA

SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 100V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

FZT653TA

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC= 1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

ISC

无锡固电

FZT655

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * Low saturation voltage

Zetex

FZT655

SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage • Complementary PNP Type – FZT755 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

FZT655TA

150V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage • Complementary PNP Type – FZT755 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

FZT657

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Low saturation voltage

Zetex

FZT657

NPN Silicon Planar Medium Power Transistor

Features ● Low saturation voltage

KEXIN

科信电子

FZT657

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 300V • BVCBO > 300V • IC = 0.5A High Continuous Current • ICM = 1A Peak Pulse Current • Complementary PNP Type: FZT757 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Rel

DIODES

美台半导体

FZT658

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Low saturation voltage

Zetex

FZT658

NPN Silicon Planar High Voltage Transistor

Features ● 400 Volt VCEO ● Low saturation voltage

KEXIN

科信电子

FZT658

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold-Up • Complementary PNP Type: FZT758 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •

DIODES

美台半导体

FZT658

400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223

Features • BVCEO > 400V • IC = 500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold-Up • Complementary PNP Type: FZT758 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •

DIODES

美台半导体

FZT658TA

400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223

Features • BVCEO > 400V • IC = 500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold-Up • Complementary PNP Type: FZT758 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •

DIODES

美台半导体

FZT651_12

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651_15

60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：501.12 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651Q_15

60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：526.1 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651QTA

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651QTC

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651QTC

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：PWR MID PERF TRANSISTOR SOT223 T 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DIODES

美台半导体

FZT651TA

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DIODES

美台半导体

FZT651TA

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

DIODES

美台半导体

FZT651TC

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

DIODES

美台半导体

FZT653

100V NPN HIGH PERFORMANCE TRANSISTOR

文件：641.43 Kbytes Page：7 Pages

DIODES

美台半导体

FZT653

NPN, 100V, 2A, SOT223

DIODES

美台半导体

FZT653_15

100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：667.07 Kbytes Page：7 Pages

DIODES

美台半导体

FZT653_18

100V NPN HIGH PERFORMANCE TRANSISTOR

文件：641.43 Kbytes Page：7 Pages

DIODES

美台半导体

FZT653Q

100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

DIODES

美台半导体

FZT653Q-HAF

功率三极管

STMICROELECTRONICS

意法半导体

FZT653TA

100V NPN HIGH PERFORMANCE TRANSISTOR

文件：641.43 Kbytes Page：7 Pages

DIODES

美台半导体

FZT653TC

100V NPN HIGH PERFORMANCE TRANSISTOR

文件：641.43 Kbytes Page：7 Pages

DIODES

美台半导体

FZT655_15

150V NPN MEDIUM POWER TRANSISTOR IN SOT223

文件：274.16 Kbytes Page：7 Pages

DIODES

美台半导体

FZT655_15

NPN Transistors

文件：853.34 Kbytes Page：3 Pages

KEXIN

科信电子

FZT657

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

文件：100.21 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

FZT657

300V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR

文件：639.8 Kbytes Page：7 Pages

DIODES

美台半导体

FZT657_15

300V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT223

文件：616.91 Kbytes Page：7 Pages

DIODES

美台半导体

FZT657_18

300V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR

文件：639.8 Kbytes Page：7 Pages

DIODES

美台半导体

FZT657QTA

300V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR

文件：639.8 Kbytes Page：7 Pages

DIODES

美台半导体

FZT657TA

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

文件：100.21 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

FZT657TA

300V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR

文件：639.8 Kbytes Page：7 Pages

DIODES

美台半导体

FZT658_15

400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223

文件：597 Kbytes Page：7 Pages

DIODES

美台半导体

FZT65产品属性

  • 类型

    描述

  • 型号

    FZT65

  • 制造商

    Zetex

  • 功能描述

    Bulk

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR NPN SOT-223

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR, NPN, SOT-223

  • 制造商

    Diodes Incorporated

  • 功能描述

    BIPOLAR TRANSISTOR, NPN, 60V; Transistor

  • Polarity

    NPN; Collector Emitter Voltage

  • V(br)ceo

    60V; Transition Frequency Typ

  • ft

    175MHz; Power Dissipation

  • Pd

    2W; DC Collector

  • Current

    3A; DC Current Gain

  • hFE

    200; No. of

  • Pins

    4 ;RoHS

  • Compliant

    Yes

FZT65供应商更多...

更新时间：2025-12-28 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市欧立现代科技有限公司
FZT651TA
ZETEX
24+
SOT-223
15800
绝对原装现货,价格低,欢迎询购!
询价
深圳市云美电子科技有限公司
FZT651TA
A
24+
a
7950
只做全新原装进口现货
询价
深圳市高捷芯城科技有限公司
FZT651QTA
DIODES(美台)
24+
SOT-223
1612
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市东来宝电子科技有限公司
FZT651TA
DIODES
24+
Tube
75000
郑重承诺只做原装进口现货
询价
深圳市力仕科电子科技有限公司
FZT651TA
DIODES(美台)
25
SOT-223
102
QQ询价 绝对原装正品
询价
深圳市科芯源微电子有限公司
FZT651QTA
DIODES/美台
23+
SOT-223
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市明嘉莱科技有限公司
FZT651TA
DIODES/美台
25+
SOT223
918000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
FZT651TA
Diodes(美台)
24+
SOT-223
8848
原厂可订货,技术支持,直接渠道。可签保供合同
询价
中天科工半导体（深圳）有限公司
FZT651TC
DIODES/美台
25+
SOT223
32360
DIODES/美台全新特价FZT651TC即刻询购立享优惠#长期有货
询价
深圳市中联芯电子有限公司
FZT651TA
DIODES/美台
24+
SOT-223-4
8750
只做原装/假一赔十/安心咨询
询价

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