SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 100V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC= 1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 2A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100V NPN HIGH PERFORMANCE TRANSISTOR

100V NPN HIGH PERFORMANCE TRANSISTOR

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Multi-Function Multi-Range Solid-State

• Functions As Timer or Counter • Five Time Ranges • Six Single-Cycle and Eight Repeat-Cycle Timing Modes • Sealed Faceplate • Cycle Counter • Count Input Scaling • Data Retention Memory with EEPROM Circuitry. (653-8-4000, 653-8-4001 Models) • Data Retention Memory with Lithium Battery (inc

MINIATURE FUSEHOLDERS

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Premier Supplier of Electronic Hardware

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DC Block 1.85mm-F to 1.85mm-M

文件：178.99 Kbytes Page：2 Pages

DC Block 1.85mm-F to 1.85mm-M

文件：178.99 Kbytes Page：2 Pages