60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > 60V • IC = 3A High Continuous Current • ICM = 6A Peak Pulse Current • Low Saturation Voltage VCE(sat)

60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：259.39 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：PWR MID PERF TRANSISTOR SOT223 T 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR

DESCRIPTION The TK651xx low power step-up DC-DC converter is designed for portable battery powered systems, capable of operating from a single battery cell down to 0.9 V. The TK651xx provides the power switch and the control circuit for a boost converter. The converter takes a DC input and boosts

DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER

Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8

DUAL NPN MEDIUM POWER TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER TRANSISTORS

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt