型号 功能描述 生产厂家 企业 LOGO 操作
FSS13A0D

2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

Intersil

FSS13A0D

2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

RENESAS

瑞萨

2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

Intersil

2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

Intersil

2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

Intersil

9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Intersil

9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Intersil

FSS13A0D产品属性

  • 类型

    描述

  • 型号

    FSS13A0D

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

更新时间:2025-10-20 17:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOS
24+
SOP3.9MM
1000
只做原装正品现货 欢迎来电查询15919825718
SANYO/三洋
04+
SOP8
880000
明嘉莱只做原装正品现货
SANYO/三洋
21+
SOP-8
6796
优势供应 实单必成 可13点增值税
SANYO/三洋
2450+
SOP8P
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
SANYO
25+23+
SOP-8
29776
绝对原装正品现货,全新深圳原装进口现货
SANYO/三洋
22+
SOP8
8000
原装正品支持实单
SANYO
25+
SOP
4500
全新原装、诚信经营、公司现货销售
TOS
23+
SOP/8
7000
绝对全新原装!100%保质量特价!请放心订购!
SANYO
24+
SOP-8
8200
新进库存/原装
SANYO/三洋
2223+
SOP-8
26800
只做原装正品假一赔十为客户做到零风险

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