位置:首页 > IC中文资料第6297页 > FSS13A0D
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
FSS13A0D | 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | ||
FSS13A0D | 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | |||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | |||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | |||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |
FSS13A0D产品属性
- 类型
描述
- 型号
FSS13A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOS |
24+ |
SOP3.9MM |
1000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SANYO/三洋 |
04+ |
SOP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
21+ |
SOP-8 |
6796 |
优势供应 实单必成 可13点增值税 |
|||
SANYO/三洋 |
2450+ |
SOP8P |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
SANYO |
25+23+ |
SOP-8 |
29776 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
SANYO/三洋 |
22+ |
SOP8 |
8000 |
原装正品支持实单 |
|||
SANYO |
25+ |
SOP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
TOS |
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
SANYO |
24+ |
SOP-8 |
8200 |
新进库存/原装 |
|||
SANYO/三洋 |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
FSS13A0D规格书下载地址
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DdatasheetPDF页码索引
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