位置：首页 > IC中文资料第6297页 > FSS13A0D1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS13A0D1 | 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL |   | |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | |
FSS13A0D1产品属性
- 类型
描述
- 型号
FSS13A0D1
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Honeywell |
24+ |
NA |
5000 |
进口原装正品优势供应 |
|||
HONEYWELL |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
触力传感器 |
23+ |
HONEYWLL |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HONEYWELL/霍尼韦尔 |
23+ |
SMD-4 |
50000 |
全新原装正品现货,支持订货 |
|||
3006 |
原装现货 |
||||||
HONEYWELL |
25+ |
传感器 |
396 |
就找我吧!--邀您体验愉快问购元件! |
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DdatasheetPDF页码索引
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