位置：首页 > IC中文资料第6297页 > FSL13A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL |   | |
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | |
FSL13A0D产品属性
- 类型
描述
- 型号
FSL13A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
FAIRCHIL |
24+ |
DIP8 |
5850 |
进口原管环保 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-8 |
30000 |
代理全新原装现货,价格优势 |
|||
HONEY |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
TDK/东电化 |
26+ |
SMD |
40000 |
全新原装数量均有多电话咨询 |
|||
FAI |
23+ |
DIP8 |
175 |
全新原装正品现货,支持订货 |
|||
FAI |
23+ |
DIP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FSC |
20+ |
8-DIP |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
FSL13A0D芯片相关品牌
FSL13A0D规格书下载地址
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DdatasheetPDF页码索引
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