位置：首页 > IC中文资料第6297页 > FSL13A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |   | |
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |
FSL13A0D产品属性
- 类型
描述
- 型号
FSL13A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
DIP8 |
4163 |
原装正品,假一罚十! |
|||
Fairchild |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON |
23+ |
DIP8 |
4000 |
正规渠道,只有原装! |
|||
INF |
模块 |
1000 |
一级代理,全新原装进口正品现货! |
||||
FAIRCHILD/仙童 |
2223+ |
DIP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ISL |
05+ |
原厂原装 |
4283 |
只做全新原装真实现货供应 |
|||
FAIRCHILD |
25+23+ |
DIP8 |
27066 |
绝对原装正品全新进口深圳现货 |
FSL13A0D芯片相关品牌
FSL13A0D规格书下载地址
FSL13A0D参数引脚图相关
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- FSL538A
- FSL518H
- FSL518A
- FSL430R
- FSL430D
- FSL34T
- FSL26
- FSL24
- FSL234R
- FSL234D
- FSL230R
- FSL230D
- FSL230
- FSL23
- FSL214R
- FSL214D
- FSL214
- FSL210T
- FSL206MRN
- FSL206MRL
- FSL206MRBN
- FSL206MR
- FSL2
- FSL176MRTUDTU
- FSL16
- FSL156MRIN
- FSL156MRBN
- FSL146MRBN
- FSL14
- FSL13AOR4
- FSL13AOR1
- FSL13AOD3
- FSL13AOD1
- FSL13A0R4
- FSL13A0R3
- FSL13A0R1
- FSL13A0R
- FSL13A0D3
- FSL13A0D1
- FSL138MRTWDTU
- FSL137MRIN
- FSL137HNY
- FSL137H_10
- FSL137H
- FSL136MRTWDTU
- FSL136MRT
- FSL136MR
- FSL136HRLX
- FSL136HRL
- FSL136HR
- FSL130R4
- FSL130R3
- FSL130R1
- FSL130R
- FSL130D4
- FSL130D3
- FSL130D1
- FSL130D
- FSL13
- FSL128MRTWDTU
- FSL127H
- FSL110R
- FSL110D
- FSK-S5
- FSK-S30
- FSK-S15
- FSK-S10
- FSK5X20
- FSJ9160
- FSJ4N65
- FSJ264R
- FSJ264D
- FSJ260R
- FSJ260D
- FSJ163R
- FSJ163D
FSL13A0D数据表相关新闻
FSEZ1317MY
FSEZ1317MY
2024-3-26FSR03CE
FSR03CE
2023-4-28FSM2JSMAATR
FSM2JSMAATR
2022-8-11FSGM0465RUDTU原装现货
FSGM0465RUDTU原装正品
2021-8-12FSMD005-1206-R1206自恢复保险丝
FSMD005-1206-R 1206自恢复保险丝
2019-11-16fsk433M射频模块csma/ca防冲突碰撞模块支持并发上报星状自组网
HP1812_GFSK_V1.0 我们公司自主研发的一款专业无线通讯模块，工作于 ISM433MHz 频段，具有高集成度、低功耗、小尺寸、高性能等优点，模块采用华普最新 CMT2300A 射频芯片，创新的采用高效的循环交织纠检错编码，抗干扰能力和灵敏度都大大提高，MAC 层数据传输使用 AES 加密以及硬件 CRC 校验，使其更加安全可靠。模块提供了
2019-4-2
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
