位置：首页 > IC中文资料第6297页 > FSL13A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |   | |
FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |
FSL13A0D产品属性
- 类型
描述
- 型号
FSL13A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
25+ |
DIP8 |
4163 |
原装正品,假一罚十! |
|||
FAIRCHILD |
13+ |
DIP-8 |
37 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Fairchild Semiconductor |
2023+ |
8-DIP |
3198 |
安罗世纪电子只做原装正品货 |
|||
ON |
24+ |
DIP8 |
39500 |
进口原装现货 支持实单价优 |
|||
ON |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
FAIRCHI |
25+ |
DIP8 |
4168 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCHILD |
25+23+ |
DIP8 |
27066 |
绝对原装正品全新进口深圳现货 |
FSL13A0D规格书下载地址
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