位置：首页 > IC中文资料第6243页 > FSL13A0R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0R | 9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSL13A0R产品属性
- 类型
描述
- 型号
FSL13A0R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ON Sem |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FSC/ON |
23+ |
原包装原封□□ |
5250 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
|||
FAIRCHILD/仙童 |
21+ |
DIP8 |
3270 |
原装现货假一赔十 |
|||
ISL |
05+ |
原厂原装 |
4283 |
只做全新原装真实现货供应 |
|||
ON |
2017+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
ONSemiconductor |
23+ |
8-MDIP |
66800 |
进口原装一级分销 |
|||
onsemi(安森美) |
2021+ |
DIP-8 |
499 |
||||
ISL |
23+ |
65480 |
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