位置：首页 > IC中文资料第6243页 > FSL13A0R
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0R | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL |   | |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | |
FSL13A0R产品属性
- 类型
描述
- 型号
FSL13A0R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
DIP-8 |
4505 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ON |
24+ |
DIP8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD/仙童 |
2026+ |
DIP8 |
4163 |
原装正品,假一罚十! |
|||
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
DIP8 |
4000 |
正规渠道,只有原装! |
|||
ISL |
23+ |
65480 |
|||||
FAIRCHILD/仙童 |
2447 |
DIP-8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
fairchild |
23+ |
DIP |
29175 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
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DdatasheetPDF页码索引
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