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FQU13N06价格
参考价格：￥1.6809
型号：FQU13N06LTU 品牌：Fairchild 备注：这里有FQU13N06多少钱，2025年最近7天走势，今日出价，今日竞价，FQU13N06批发/采购报价，FQU13N06行情走势销售排行榜，FQU13N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU13N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
FQU13N06 | N-Channel 60 V (D-S) MOSFET 文件：1.67068 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.115Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | Fairchild 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
60V N-Channel MOSFET 文件：736.7 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，IPAK | ONSEMI 安森美半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：996.12 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
60V LOGIC N-Channel MOSFET 文件：739.25 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
MOSFET N-CH 60V 10A IPAK | ONSEMI 安森美半导体 | | ||
N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | Fairchild 仙童半导体 | |
FQU13N06产品属性
- 类型
描述
- 型号
FQU13N06
- 功能描述
MOSFET 60V N-Channel QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
TO-251 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
24+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRC |
2023+ |
TO-251(IPAK) |
50000 |
原装现货 |
|||
ON/安森美 |
23+ |
SMD |
8000 |
专注配单,只做原装进口现货 |
|||
FSC |
25+ |
TO-2632L(D2PAK) |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
VBsemi |
23+ |
TO251 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
24+ |
TO-251 |
3929 |
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FQU13N06规格书下载地址
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2021-1-14
DdatasheetPDF页码索引
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